| PART |
Description |
Maker |
| XC9503 |
2ch.Step-Down DC/DC Controller ICs
|
Torex Semiconductor
|
| XC9503B092AL XC9503B092AR XC9503B093 XC9503B095A X |
2ch Step-down DC/DC Controller ICs
|
TOREX[Torex Semiconductor]
|
| XC9505 XC9505B095A XC9505B092A XC9505B093A |
2ch. Step-Down / Inverting DC/DC Controller ICs
|
TOREX[Torex Semiconductor]
|
| STK4161X STK4191 STK4191X STK4141X STK4151X STK420 |
2ch./1packge - Power Supply Built-in Muting Circuit 25W/ch. ~ 70W/ch. THD=0.02%
2ch /1packge / - Power Supply Built-in Muting Circuit 25W/ch ~ 70W/ch THD=0.02%
2ch./1packge, - Power Supply Built-in Muting Circuit 25W/ch. ~ 70W/ch. THD=0.02% 2ch./1packge-电源内置静噪电路25W/ch70W/ch。总谐波失真\u003d 0.02
Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 10uF; Voltage: 450V; Case Size: 12.5x20 mm; Packaging: Bulk
|
http://
SANYO[Sanyo Semicon Device]
Sanyo Electric Co., Ltd.
Sanyo Electric Co.,Ltd.
|
| R1280D002A-TR R1280D002B R1280D002B-TR R1280D002C |
2CH PWM DC/DC Controller 0.05 A DUAL SWITCHING CONTROLLER, 805 kHz SWITCHING FREQ-MAX, PDSO10
2CH PWM DC/DC Controller 2声道的PWM DC / DC控制
|
Ricoh Co., Ltd.
RICOH electronics devic...
|
| IRF054SMD |
N-Channel Power MOSFET(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)(N沟道功率MOS场效应管(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)) N沟道功率MOSFET（减振钢板基本：60V的，身份证（续）5A条，的Rds（on）：0.027Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本0V的，身份证（续）5A条，的Rds（on.027Ω））
|
SemeLAB
Seme LAB
International Rectifier
http://
|
| IRFN140SMD |
ER CET 0 22 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Power MOSFET(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）3.9A，的Rds（on）：0.077Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本100V的，身份证（续）3.9A时，RDS（对）：0.077Ω））
|
TT electronics Semelab, Ltd.
International Rectifier, Corp.
Seme LAB
|
| IRFE230 2N6798U |
N-Channel Power MOSFET(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）.8A时，RDS（上）：0.46Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）.8A时，RDS（对）：0.46Ω））
N-Channel N沟道
|
NXP Semiconductors N.V.
TT electronics Semelab Limited
Seme LAB
|
| IRF9530S IRF9530SMD |
P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω))
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| IRF240SMD |
N.CHANNEL POWER MOSFET
N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）3.9A，的Rds（on）：0.18Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）3.9A时，RDS（对）：0.18Ω））
|
SemeLAB
SEME-LAB[Seme LAB]
Air Cost Control
|
| SML100A9 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
TT electronics Semelab Limited
Semelab(Magnatec)
|
| AS3668 AS3668-BQFT |
4 Channel Breathl ight Cont rol ler
|
austriamicrosystems AG
|
